p - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u l . , 2 0 0 6 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 4 3 0 3 k f e a t u r e s a p p l i c a t i o n s p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n p - c h a n n e l m o s f e t apm4303 handling code temp. range package code package code k : sop-8 operating junction temp. range c : -55 to 150 c handling code tr : tape & reel lead free code l : lead free device apm4303 k : xxxxx - date code lead free code apm4303 xxxxx - 3 0 v / - 1 3 a , r d s ( o n ) = 7 m w ( t y p . ) @ v g s = - 2 0 v r d s ( o n ) = 8 m w ( t y p . ) @ v g s = - 1 0 v r d s ( o n ) = 1 2 m w ( t y p . ) @ v g s = - 4 . 5 v s u p e r h i g h d e n s e c e l l d e s i g n r e l i a b l e a n d r u g g e d s o p - 8 p a c k a g e l e a d f r e e a v a i l a b l e ( r o h s c o m p l i a n t ) t o p v i e w o f s o p - 8 ( 1, 2, 3 ) d g d s s (4) (5,6,7,8) s d d n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s a n d c o m p a t i b l e w i t h b o t h s n p b a n d l e a d - f r e e s o l d i e r i n g o p e r a t i o n s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j s t d - 0 2 0 c f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . p o w e r m a n a g e m e n t i n n o t e b o o k c o m p u t e r , p o r t a b l e e q u i p m e n t a n d b a t t e r y p o w e r e d s y s t e m s
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u l . , 2 0 0 6 w w w . a n p e c . c o m . t w 2 a p m 4 3 0 3 k a b s o l u t e m a x i m u m r a t i n g s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) symbol parameter rating unit v dss drain - source voltage - 30 v gss gate - source voltage 2 5 v i d * continuous drain current - 1 3 i dm * pulsed drain current v gs = - 2 0 v - 5 0 a i s * diode continuous forward current - 2.8 a t j maximum junction temperature 150 t stg storage temperature range - 55 to 150 c t a =25 c 2 p d * maximum power dissipation t a =100 c 0.8 w r q ja * thermal resistance - junction to ambient 62.5 c / w note : *surface mounted on 1in 2 pad area, t 10sec. apm 4 30 3 k symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds = - 250 m a - 30 v v ds = - 24v, v gs =0v - 1 i dss zero gate voltage drain current t j =85 c - 30 m a v gs(th) gate thre shold voltage v ds =v gs , i ds = - 250 m a - 1 - 1. 8 - 2 .5 v i gss gate leakage current v gs =25v, v ds =0v 100 na v gs = - 20 v, i ds = - 1 3a 7 8.5 v gs = - 10v, i ds = - 11a 8 10 r ds(on) a drain - source on - state resistance v gs = - 4.5v, i ds = - 9a 12 16 m w v sd a diode forward v oltage i sd = - 2.2 a, v gs =0v - 0. 7 5 - 1. 1 v gate charge characteristics b q g total gate charge 56 78 q gs gate - source charge 10 q gd gate - drain charge v ds = - 1 5 v, v gs = - 1 0 v, i d s = - 1 3 a 11 nc
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u l . , 2 0 0 6 w w w . a n p e c . c o m . t w 3 a p m 4 3 0 3 k e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm 4 30 3 k symbol parameter test condition min. typ. max. unit dynamic characteristics b r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 3.5 w c iss input capacitance 3 3 00 c oss output capacitance 700 c rss rever se transfer capacitance v gs =0v , v ds = - 1 5v , f requency =1.0mhz 440 pf t d(on) turn - on delay time 11 21 t r turn - on rise time 13 24 t d(off) turn - off delay time 82 149 t f turn - off fall time v dd = - 15v, r l =15 w , i d s = - 1a, v gen = - 10 v , r g =6 w 42 77 ns t rr b reverse recovery time 20 ns q rr b reverse recovery charge i sd = - 1 3 a, dl s d /dt = 100a/ m s 7 n c notes: a : pulse test ; pulse width 3 00 m s, duty cycle 2% . b : guaranteed by design, not subject to production testing .
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u l . , 2 0 0 6 w w w . a n p e c . c o m . t w 4 a p m 4 3 0 3 k t y p i c a l c h a r a c t e r i s t i c s d r a i n c u r r e n t s a f e o p e r a t i o n a r e a t h e r m a l t r a n s i e n t i m p e d a n c e p o w e r d i s s i p a t i o n normalized transient thermal resistance p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) -i d - drain current (a) t j - j u n c t i o n t e m p e r a t u r e ( c ) - v d s - d r a i n - s o u r c e v o l t a g e ( v ) s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) -i d - drain current (a) 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t a =25 o c 1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 62.5 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 14 t a =25 o c,v g =-20v 0.01 0.1 1 10 100 0.01 0.1 1 10 100 rds(on) limit 1s t a =25 o c 10ms 300 m s 1ms 100ms dc
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u l . , 2 0 0 6 w w w . a n p e c . c o m . t w 5 a p m 4 3 0 3 k d r a i n - s o u r c e o n r e s i s t a n c e g a t e t h r e s h o l d v o l t a g e o u t p u t c h a r a c t e r i s t i c s t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) g a t e - s o u r c e o n r e s i s t a n c e r ds(on) - on - resistance (m w ) - i d - d r a i n c u r r e n t ( a ) - v d s - d r a i n - s o u r c e v o l t a g e ( v ) -i d - drain current (a) t j - j u n c t i o n t e m p e r a t u r e ( c ) r ds(on) - on - resistance (m w ) normalized threshold voltage -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =-250 m a -v gs - gate - source voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 35 40 45 50 2.5v 3.5v 3v v gs = 4,5,6,7,8,9,10v 0 10 20 30 40 50 0 2 4 6 8 10 12 14 16 18 20 v gs =4.5v v gs =20v v gs =10v 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 i d =-13a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u l . , 2 0 0 6 w w w . a n p e c . c o m . t w 6 a p m 4 3 0 3 k d r a i n - s o u r c e o n r e s i s t a n c e s o u r c e - d r a i n d i o d e f o r w a r d c a p a c i t a n c e g a t e c h a r g e t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) - v s d - s o u r c e - d r a i n v o l t a g e ( v ) -i s - source current (a) - v d s - d r a i n - s o u r c e v o l t a g e ( v ) c - capacitance (pf) q g - g a t e c h a r g e ( n c ) -v gs - gate - source voltage (v) -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 r on @t j =25 o c: 7m w v gs = -20v i ds = -13a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 10 50 t j =150 o c t j =25 o c 0 5 10 15 20 25 30 0 500 1000 1500 2000 2500 3000 3500 4000 4500 frequency=1mhz crss coss ciss 0 10 20 30 40 50 60 0 1 2 3 4 5 6 7 8 9 10 v ds = -15v i d = -13a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u l . , 2 0 0 6 w w w . a n p e c . c o m . t w 7 a p m 4 3 0 3 k p a c k a g i n g i n f o r m a t i o n millimeters inches dim min. max. min. max. a 1.35 1.75 0.053 0.069 a1 0.10 0.25 0.004 0.010 d 4.80 5.00 0.189 0.197 e 3.80 4.00 0.150 0.157 h 5.80 6.20 0.228 0.244 l 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27bsc 0.50bsc f 1 0 8 0 8 s o p - 8 p i n ( r e f e r e n c e j e d e c r e g i s t r a t i o n m s - 0 1 2 ) h e e1 e2 0 . 0 1 5 x 4 5 d a a1 0.004max. 1 l
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u l . , 2 0 0 6 w w w . a n p e c . c o m . t w 8 a p m 4 3 0 3 k terminal material solder - plated copper (solder material : 90/10 or 63/37 snpb) , 100%sn lead solderability meets eia specification rsi86 - 91, ansi/j - std - 002 category 3. t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p r e f l o w c o n d i t i o n ( i r / c o n v e c t i o n o r v p r r e f l o w ) c l a s s i f i c a t i o n r e f l o w p r o f i l e s p h y s i c a l s p e c i f i c a t i o n s profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak /classificatioon temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/se cond max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package .measured on the body surface.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u l . , 2 0 0 6 w w w . a n p e c . c o m . t w 9 a p m 4 3 0 3 k c a r r i e r t a p e & r e e l d i m e n s i o n s t ao e w po p ko bo d1 d f p1 table 1. snpb entectic process ? package peak reflow temperature s package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 240 +0/ - 5 c 225 +0/ - 5 c 3 2.5 mm 225 +0/ - 5 c 225 +0/ - 5 c table 2. pb - free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 3 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. c l a s s i f i c a t i o n r e f l o w p r o f i l e s ( c o n t . ) test item method description solderability mil-std-883d-2003 245c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125c pct jesd-22-b, a102 168 hrs, 100% rh, 121c tst mil-std 883d-1011.9 -65c ~ 150c, 200 cycles r e l i a b i l i t y t e s t p r o g r a m
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u l . , 2 0 0 6 w w w . a n p e c . c o m . t w 1 0 a p m 4 3 0 3 k c u s t o m e r s e r v i c e c o v e r t a p e d i m e n s i o n s application carrier width cover tape width devices per reel sop- 8 12 9.3 2500 c a r r i e r t a p e & r e e l d i m e n s i o n s ( c o n t . ) a j b t2 t1 c application a b c j t1 t2 w p e 330 1 62 1.5 12.75 + 0.1 5 2 + 0.5 12.4 +0.2 2 0.2 12 + 0.3 - 0.1 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t sop - 8 5.5 0.1 1.55 0.1 1.55+ 0.25 4.0 0.1 2.0 0.1 6.4 0.1 5.2 0.1 2.1 0.1 0.3 0.013 (mm) anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369
|
